V V GS Gate-to-Source Voltage ±20 I T C = 25 C Continuous Drain Current, V GS -18 I T C = 100 C Continuous Drain Current, V GS -11 A I DM - PDF

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PD IRF9Z30PbF Features P-Channel Verasatility Compact Plastic Package Fast Switching Low Drive Current Ease of Paralleling Excellent Temperature Stability Lead-Free HEXFET POWER MOSFET Product Summary

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PD IRF9Z30PbF Features P-Channel Verasatility Compact Plastic Package Fast Switching Low Drive Current Ease of Paralleling Excellent Temperature Stability Lead-Free HEXFET POWER MOSFET Product Summary Part Number V DS (V) R DSON (Ω) I D (A) IRF9Z30PbF D Description The HEXFET technology is the key to International Rectifier s advanced line of power MOSFET transistors. The efficient geometry and unique processing of the HEXFET design achieve very low on-state resistence combined with high transconductance and extreme device ruggedness. The P-Channel HEXFETs are designed for applications which require the convenience of reverse polarity operation. They retain all of the features of the more common N-Channel HEXFETs such as voltage control, very fast switching, ease of paralleling, and excellent temperature stability. P-Channel HEXFETs are intended for use in power stages where complementary symmetry with N-Channel devices offers circuit simplification. They are also very useful in drive stages because of the circuit versatility offered by the reverse polarity connection. Applications include motor control, audio amplifiers, switched mode converters, control circuit and pulse amplifiers. Absolute Maximum Ratings Parameter Max. Units V DS Drain-to-Source Voltage 1-50 V DGR Drain-to-Gate Voltage (R GS =20KΩ) 1-50 V V GS Gate-to-Source Voltage ±20 I T C = 25 C Continuous Drain Current, V GS -18 I T C = 100 C Continuous Drain Current, V GS -11 A I DM Pulsed Drain Current 2-60 P C = 25 C Max. Power Dissipation 74 W 1 03/27/07 G S TO-220AB Linear Derating Factor 0.59 W/ C I LM Inductive Current, Clamped (L= 100µH) See Fig A I L Unclamped Inductive Current(Avalanche Current) 3 See Fig T J Operating Junction and -55 to T STG Storage Temperature Range C Lead Temperature 300 (0.063 in. (1.6mm) from case for 10s) Thermal Resistance Parameter Typ. Max. Units R θjc Junction-to-Case 1.7 R θcs Case-to-Sink, Flat, Greased Surface 1.0 C/W R θja Junction-to-Ambient 80 Electrical T J = 25 C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions BV DSS Drain-to-Source Breakdown Voltage -50 V V GS = 0V, I D = -250µA V GS(th) Gate Threshold Voltage V V DS = V GS, I D = -250µA I GSS Gate-to-Source Forward Leakage -500 na V GS = -20V Gate-to-Source Reverse Leakage 500 V GS = 20V I DSS Drain-to-Source Leakage Current -250 µa V DS = Max. Rating, V GS = 0V V DS = Max. Rating x 0.8, V GS = 0V, T J = 125 C I D(on) On- State Drain Current 4-18 A V DS I D(on) X R DS(ON) (max)., V GS = -10V R DS(on) Static Drain-to-Source On-Resistance Ω V GS = -10V, I D = -9.3A g fs Forward Transconductance S V DS = 2 X V GS, I DS = -9.0A C iss Input Capacitance 900 V GS = 0V C oss Output Capacitance 570 pf V DS = -25V C rss Reverse Transfer Capacitance 140 ƒ = 1.0MHz, See Fig.10 t d(on) Turn-On Delay Time V DD = -25V, ID = -18A, RG = 13Ω, RD = 1.3Ω t r Rise Time See Fig.16 t d(off) Turn-Off Delay Time ns (MOSFET switching times are assentially independent t f Fall Time of operating temperature) Q g Total Gate Charge (Gate -Source Plus Gate-Drain) VGS = -10V, ID = -18A, V DS = 0.8 Max. Rating Q gs Post-Vth Gate-to-Source Charge nc See Fig.17 for test circuit (Gate charge is essentially Q gd Gate-to-Drain Charge independent of operating temperature.) L D Internal Drain Inductance Measured from the drain Modified MOSFET symbol 4.5 lead, 6mm (0.25 in.) from showing package to center of die. the internal nh L S Internal Source Inductance Measured from the source device 7.5 lead, 6mm (0.25 in.) from package to source bonding pad. inductances. Source-Drain Diode Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions I S Continuous Source Current MOSFET symbol -18 (Body Diode) showing the A I SM Pulsed Source Current integral reverse -60 (Body Diode) 3 p-n junction rectifier. V SD Diode Forward Voltage V T J = 25 C, I S = -18A, V GS = 0V t rr Reverse Recovery Time ns T J = 25 C, I F = -18A Q rr Reverse Recovery Charge µc di/dt = 100A/µs Forward Turn-on Time Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L S + L D. T on Note: 1 T J = 25 C to 150 C 2 Repetitive Rating :Pulse width limited by max. junction tempeature. See Transient Thermal Impedance Curve (Fig.5). V dd = -25V, T J = 25 C, L = 100µH, R G = 25Ω. 4 Pulse Test : Pulse width 300ms, Duty Cycle 2%. 2 3 4 5 6 TO-220AB Package Outline Dimensions are shown in millimeters (inches) TO-220AB Part Marking Information EXAMPLE: THIS IS AN IRF1010 LOT CODE 1789 ASSEMBLED ON WW 19, 2000 IN THE ASSEMBLY LINE C Note: P in assembly line position indicates Lead - Free INTERNATIONAL RECTIFIER LOGO ASSEMBLY LOT CODE PART NUMBER DATE CODE YEAR 0 = 2000 WEEK 19 LINE C Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR s Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) TAC Fax: (310) Visit us at for sales contact information. 03/
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