IRF5210. HEXFET Power MOSFET V DSS = -100V. R DS(on) = 0.06Ω I D = -40A - PDF

dvanced Process Technoogy Utra Low OnResistance ynamic dv/dt Rating 75 C Operating Temperature Fast Switching PChanne Fuy vaanche Rated escription Fifth Generation HEXFETs from Internationa Rectifier utiize

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dvanced Process Technoogy Utra Low OnResistance ynamic dv/dt Rating 75 C Operating Temperature Fast Switching PChanne Fuy vaanche Rated escription Fifth Generation HEXFETs from Internationa Rectifier utiize advanced processing techniques to achieve extremey ow onresistance per siicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are we known for, provides the designer with an extremey efficient and reiabe device for use in a wide variety of appications. The TO220 package is universay preferred for a commerciaindustria appications at power dissipation eves to approximatey 50 watts. The ow therma resistance and ow package cost of the TO220 contribute to its wide acceptance throughout the industry. G S P 9434 IRF52 HEXFET Power MOSFET V SS = 0V R S(on) = 0.06Ω I = 40 TO220B bsoute Maximum Ratings Parameter Max. Units T C = 25 C Continuous rain Current, V V 40 T C = 0 C Continuous rain Current, V V 29 I M Pused rain Current 40 C = 25 C Power issipation 200 W Linear erating Factor.3 W/ C V GS GatetoSource Votage ± 20 V E S Singe Puse vaanche Energy 780 mj I R vaanche Current 2 E R Repetitive vaanche Energy 20 mj dv/dt Peak iode Recovery dv/dt ƒ 5.0 V/ns T J Operating Junction and 55 to 75 T STG Storage Temperature Range C Sodering Temperature, for seconds 300 (.6mm from case ) Mounting torque, 632 or M3 screw bf in (.N m) Therma Resistance Parameter Typ. Max. Units R θjc JunctiontoCase 0.75 R θcs CasetoSink, Fat, Greased Surface 0.50 C/W R θj Junctiontombient 62 5/3/98 IRF52 Eectrica T J = 25 C (uness otherwise specified) Parameter Min. Typ. Max. Units Conditions V (BR)SS raintosource Breakdown Votage 0 V V GS = 0V, I = 250µ V (BR)SS/ T J Breakdown Votage Temp. Coefficient 0. V/ C Reference to 25 C, I = m R S(on) Static raintosource OnResistance 0.06 Ω V GS = V, I = 24 V GS(th) Gate Threshod Votage V V S = V GS, I = 250µ g fs Forward Transconductance S V S = 50V, I = 2 I SS raintosource Leakage Current 25 V µ S = 0V, V GS = 0V 250 V S = 80V, V GS = 0V, T J = 50 C I GSS GatetoSource Forward Leakage 0 V GS = 20V n GatetoSource Reverse Leakage 0 V GS = 20V Q g Tota Gate Charge 80 I = 2 Q gs GatetoSource Charge 25 nc V S = 80V Q gd Gatetorain ( Mier ) Charge 97 V GS = V, See Fig. 6 and 3 t d(on) TurnOn eay Time 7 V = 50V t r Rise Time 86 I = 2 ns t d(off) TurnOff eay Time 79 R G = 2.5Ω t f Fa Time 8 R = 2.4Ω, See Fig. Between ead, L Interna rain Inductance 4.5 6mm (0.25in.) nh G from package L S Interna Source Inductance 7.5 and center of die contact C iss Input Capacitance 2700 V GS = 0V C oss Output Capacitance 790 pf V S = 25V C rss Reverse Transfer Capacitance 450 ƒ =.0MHz, See Fig. 5 S Sourcerain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions I S Continuous Source Current MOSFET symbo 40 (Body iode) showing the I SM Pused Source Current integra reverse G 40 (Body iode) pn junction diode. S V S iode Forward Votage.6 V T J = 25 C, I S = 2, V GS = 0V t rr Reverse Recovery Time ns T J = 25 C, I F = 2 Q rr Reverse RecoveryCharge.2.8 µc di/dt = 0/µs t on Forward TurnOn Time Intrinsic turnon time is negigibe (turnon is dominated by L S L ) Notes: Repetitive rating; puse width imited by max. junction temperature. ( See fig. ) V = 25V, starting T J = 25 C, L = 3.5mH R G = 25Ω, I S = 2. (See Figure 2) ƒ I S 2, di/dt 480/µs, V V (BR)SS, T J 75 C Puse width 300µs; duty cyce 2%. IRF52 I, raintosource Current () 00 0 VGS TOP 5V V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V 4.5V 40µs PULSE WITH T c = 25 C 0. 0 V S, raintosource Votage (V) Fig. Typica Output Characteristics I, raintosource Current () 00 0 VGS TOP 5V V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V 4.5V 40µs PULSE W ITH T C = 75 C 0. 0 V S, raintosource Votage (V) Fig 2. Typica Output Characteristics I, raintosource Current () 00 0 T = 25 C J V S = 50V 40µs PULSE W ITH V, GatetoSource Votage (V) GS T J = 75 C R S(on), raintosource On Resistance (Normaized) I = 35 V GS = V T J, Junction Temperature ( C) Fig 3. Typica Transfer Characteristics Fig 4. Normaized OnResistance Vs. Temperature IRF52 C, Capacitance (pf) C iss C oss C rss V GS = 0V, f = MHz C iss = C gs C gd, C ds SHORTE C rss = C gd C oss = C ds C gd 0 0 V S, raintosource Votage (V) V GS, GatetoSource Votage (V) I = 2 V S = 80V V S = 50V V S = 20V FOR TEST CIRCUIT 0 SEE FIGURE Q G, Tota Gate Charge (nc) Fig 5. Typica Capacitance Vs. raintosource Votage Fig 6. Typica Gate Charge Vs. GatetoSource Votage I S, Reverse rain Current () 00 0 T = 75 C J T = 25 C J V GS = 0V V S, Sourcetorain Votage (V) I, rain Current () 00 0 OPERTION IN THIS RE LIMITE BY R S(on) µs 0µs ms ms T C = 25 C T J = 75 C Singe Puse 0 00 V S, raintosource Votage (V) Fig 7. Typica Sourcerain iode Forward Votage Fig 8. Maximum Safe Operating rea IRF52 50 V S R 40 R G V GS.U.T. V I, rain Current () V Puse Width µs uty Factor 0. % Fig a. Switching Time Test Circuit V GS t d(on) t r t d(off) t f % T, Case Temperature ( C C) 90% V S Fig 9. Maximum rain Current Vs. Case Temperature Fig b. Switching Time Waveforms Therma Response (Z thjc ) 0. = t 0.02 SINGLE PULSE t2 0.0 (THERML RESPONSE) Notes:. uty factor = t / t 2 2. Peak T J = P M x Z thjc TC t, Rectanguar Puse uration (sec) PM Fig. Maximum Effective Transient Therma Impedance, JunctiontoCase IRF52 Fig 2a. Uncamped Inductive Test Circuit I S V S L R G.U.T V IS 20V RIVER tp 0.0Ω 5V E S, Singe Puse vaanche Energy (mj) I TOP BOTTOM Starting T J, Junction Temperature ( C) tp Fig 2c. Maximum vaanche Energy Vs. rain Current V (BR)SS Fig 2b. Uncamped Inductive Waveforms Current Reguator Same Type as.u.t. V Q G 2V.2µF 50KΩ.3µF Q GS Q G.U.T. V S V G V GS 3m Charge I G I Current Samping Resistors Fig 3a. Basic Gate Charge Waveform Fig 3b. Gate Charge Test Circuit Peak iode Recovery dv/dt Test Circuit IRF52.U.T* ƒ Circuit Layout Considerations Low Stray Inductance Ground Pane Low Leakage Inductance Current Transformer V GS R G dv/dt controed by R G I S controed by uty Factor .U.T. evice Under Test V * Reverse Poarity of.u.t for PChanne river Gate rive Period P.W. = P.W. Period [ V GS =V ] ***.U.T. I S Waveform Reverse Recovery Current Reppied Votage Body iode Forward Current di/dt.u.t. V S Waveform iode Recovery dv/dt Inductor Curent Body iode Rippe 5% Forward rop [ V ] [ ] I S *** V GS = 5.0V for Logic Leve and 3V rive evices Fig 4. For PChanne HEXFETS IRF52 Package Outine TO220B Outine imensions are shown in miimeters (inches) 2.87 (.3) 2.62 (.3).54 (.45).29 (.405) 3.78 (.49) 3.54 (.39) 4.69 (.85) 4.20 (.65) B.32 (.052).22 (.048) 5.24 (.600) 4.84 (.584) (.255) 6. (.240) (.045) M IN LE SSIGNMENTS GTE 2 RIN 3 SOU RC E 4 RIN 4.09 (.555) 3.47 (.530) 4.06 (.60) 3.55 (.40) 3X.40 (.055).5 (.045) 2.54 (.0) 2X NOTES: 3X 0.93 (.037) 0.69 (.027) 0.36 (.04) M B M 0.55 (.022) 3X 0.46 (.08) 2.92 (.5) 2.64 (.4) IM E N S IO N IN G & TO L E R N C ING P E R N S I Y 4.5M, O U T LIN E C O N F O R M S TO JE E C O U T LIN E TO 2 20 B. 2 CONTROLLING IMENSION : INCH 4 HETSINK & LE MESUREMENTS O NOT INCLUE BURRS. Part Marking Information TO220B EXMPLE EXMPLE : THIS : THIS N IS N IRF IRF W ITH W ITH SSEMBLY LOT LOT CO COE 9BM 9BM INTERNTIONL RECTIFIER IRF IRF LOGO LOGO B 9B M M SSEMBLY LOT LOT COE E PRT PRT NUMBER NUMBER TE TE COE COE (YYWW (YYWW) ) YY YY = YER = YER WW WW = WEEK = WEEK WORL HEQURTERS: 233 Kansas St., E Segundo, Caifornia 90245, Te: (3) EUROPEN HEQURTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Te: IR CN: 732 Victoria Park ve., Suite 20, Markham, Ontario L3R 2Z8, Te: (905) IR GERMNY: Saaburgstrasse 57, 6350 Bad Homburg Te: IR ITLY: Via Liguria 49, 07 Borgaro, Torino Te: IR FR EST: K&H Bdg., 2F, 304 NishiIkebukuro 3Chome, ToshimaKu, Tokyo Japan 7 Te: IR SOUTHEST SI: 35 Outram Road, #02 Tan Boon Liat Buiding, Singapore 036 Te: ata and specifications subject to change without notice. 5/98
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